Indications of bulk property changes from surface ion implantation

Surface disorder production during plasma immersion implantation and high energy ion implantation

High-depth-resolution Rutherford Backscattering Spectrometry (RBS) combined with channeling technique was used to analyze the surface layer formed during plasma immersion ion implantation (PIII) of single crystal silicon substrates. Single wavelength multiple angle of incidence ellipsometry (MAIE) was applied to estimate the thickness of the surface layer. The thickness of the disordered layer ...

Indications for Transcatheter Aortic Valve Implantation

Current Indications for Transcatheter Aortic Valve Implantation

Rising life expectancy results in an increase of degenerative and neoplastic diseases. Population-based observational studies report that 1% to 2% of patients older than 65 years have moderate-to-severe aortic stenosis (AS) (Nkomo et al., 2006). Surgical aortic valve replacement (AVR) dates back to 1960 and is currently the only treatment option for severe AS that has been shown to improve surv...

Molecular lanthanide single-ion magnets: from bulk to submonolayers.

Single-ion magnets (SIMs) are mononuclear molecular complexes exhibiting slow relaxation of magnetization. They are currently attracting a lot of interest because of potential applications in spintronics and quantum information processing. However, exploiting SIMs in, e.g. molecule-inorganic hybrid devices requires a fundamental understanding of the effects of molecule-substrate interactions on...

High-Resolution Ion Implantation from keV to MeV